Home Technology Phosphinecarboxamide based mostly InZnP QDs – an air tolerant path to luminescent III–V semiconductors

Phosphinecarboxamide based mostly InZnP QDs – an air tolerant path to luminescent III–V semiconductors

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Phosphinecarboxamide based mostly InZnP QDs – an air tolerant path to luminescent III–V semiconductors

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Nanoscale Horiz., 2023, Advance Article
DOI: 10.1039/D3NH00162H, Communication
Open Access Open Entry
Creative Commons Licence&nbsp This text is licensed beneath a Inventive Commons Attribution 3.0 Unported Licence.
Yi Wang, Jack Howley, Erica N. Faria, Chen Huang, Sadie Carter-Searjeant, Simon Fairclough, Angus Kirkland, Jason J. Davis, Falak Naz, Muhammad Tariq Sajjad, Jose M. Goicoechea, Mark Inexperienced
On this paper, we report using phosphinecarboxamide as a handy, air and moisture tolerant group-V precursor for the easy synthesis of InP-based quantum dots.
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